Semiconductor device with gate-undercutting recessed region

ABSTRACT

A semiconductor device comprises a gate structure on a semiconductor substrate and a recessed region in the semiconductor substrate. The recessed region has a widest lateral opening that is near a top surface of the semiconductor substrate. The widest lateral opening undercuts the gate structure.

CROSS REFERENCE TO RELATED APPLICATIONS

This is a continuation of U.S. patent application Ser. No. 12/408,992,filed Mar. 23, 2009, which is a division of U.S. patent application Ser.No. 11/379,408, filed Apr. 20, 2006, the entirety of which isincorporated herein by reference.

TECHNICAL FIELD

The invention is directed, in general, to semiconductor devices andintegrated circuit devices; and, more specifically, to such devicesformed with recesses.

BACKGROUND

The continuing push to produce faster semiconductor devices with lowerpower consumption has resulted in device miniaturization. In particular,smaller channel lengths are conducive to the low voltage and fasteroperation of semiconductor devices, such as complementary metal oxide(CMOS) transistors. With shrinking process geometries, the use of newmaterials is being explored to further reduce power consumption andincrease switching speeds.

Currently, there is interest in improving carrier mobility by inducingstress in the channel region of semiconductor substrates. In some cases,a portion of the substrate is removed and replaced with a material thatcan serve as source or drain structures and, also provide a tensile orcompressive stress to the channel region. Unfortunately, some of thesedevices can have an undesirably high leakage current, and in some cases,a high diode leakage. Additionally, the process used to remove portionsof the substrate can introduce non-uniformities into the substratesurface, making it more difficult to form contacts to the device.Furthermore, such devices, when comprising nickel silicide source ordrain electrodes, are prone to forming pipe-shaped defects that canshort-out the device or otherwise cause a device malfunction.

Accordingly, what is needed is a semiconductor device and its method ofmanufacture that imparts strain into the channel region of the devicewhile not suffering the drawbacks of prior art devices.

SUMMARY

One embodiment is a semiconductor device. The device comprises a gatestructure on a semiconductor substrate and a recessed region in thesemiconductor substrate. The recessed region has a widest lateralopening that is near a top surface of the semiconductor substrate. Thewidest lateral opening undercuts the gate structure.

Another embodiment is a semiconductor device configured as an integratedcircuit that comprises a transistor device comprising theabove-described gate structure and recessed region, insulating layersformed over the transistor device, and interconnections that contact thetransistor device.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 illustrates a cross-sectional view of a semiconductor device towhich an example implementation of the invention can be applied;

FIGS. 2A and 2B illustrates cross-sectional views of example shapes ofthe recessed region for a semiconductor device of the invention;

FIGS. 3 to 6 illustrate cross section views of selected steps in anexample implementation of a method of fabricating a semiconductor deviceof the invention; and

FIGS. 7 and 8 present cross-sectional views of an example method ofmanufacturing a semiconductor device configured as an integrated circuitaccording to the invention.

DESCRIPTION OF EXAMPLE EMBODIMENTS

The present invention recognizes, for the first time, that formingrecessed regions (e.g., openings) of a particular shape is important tooptimizing carrier mobility while avoiding the aforementioned currentleakage problems. In particular, it is desirable to form recessedregions having a widest lateral opening that is near a top surface ofthe semiconductor substrate. This provides maximal compressive ortensile stress to a region of the substrate that can be controlled bythe gate, e.g., a channel region, thereby minimizing the leakagecurrent. This is in contrast to some recessed region shapes (e.g.,recess-regions with rounded lateral edges) whose widest lateral openingoccurs deep in the substrate and remote from the gate.

While not limiting the scope of the invention by theory, it is believedthat current leakage in such structures occurs in the vicinity of thisdeep location, where two such recessed regions on either side of thechannel are closest to each other. It is not practical to controlcurrent leakage at this location by applying a potential to the gatebecause the location is remote from the gate. Additionally, the presentinvention benefits from the discovery that certain types ofcrystallographic orientation dependent wet etches facilitate theformation of the recessed regions having the desired shape. The use ofsuch wet etches can reduce, or eliminate altogether, the need to use adry etch to form the recessed region. This is an advantage because manydry etch processes used for source and drain recess formation alsoundesirably remove portions of shallow trench isolation (STI) structures(e.g., silicon dioxide filled STI structures). This can createnon-uniformities in the substrate surface and create regions susceptibleto diode leakage and metal silicide pipe formation.

One embodiment is a semiconductor device. FIG. 1 shows a cross-sectionalview of an example semiconductor device 100. The semiconductor device100 comprises a gate structure 105 on a semiconductor substrate 110 anda recessed region 115, and in some cases, a second recessed region 117,in the semiconductor substrate 110. The recessed region 115 has a widestlateral opening 120 that is near a top surface 122 of the semiconductorsubstrate 110. Also, the widest lateral opening 120 undercuts the gatestructure 105.

As shown in FIG. 1, the widest lateral opening 120 undercuts the gatestructure 105 when a portion 125 of the recess region 115 is underneatha perimeter 130 of the gate structure 105. The widest lateral opening120 is near the top surface 122 when the widest lateral opening 120 islocated in a region of the substrate 110, e.g., a channel region 135,that is controllable by applying an electrical potential to a gateelectrode 140. For instance, for gate lengths 142 of about 100 nm orless, the gate 140 can control current flow through the channel region135 to a depth 145 in the substrate 110 of about 25 nm. In suchinstances the widest lateral opening 120 is preferably within about 10nanometers of the top surface 122. One skilled in the art wouldunderstand how the depth 145 of substrate 110 controllable by the gateelectrode 140 would be different for different gate lengths 142 andtherefore how locating the widest lateral opening 120 near the topsurface 122 would vary accordingly.

In some preferred embodiments, as shown in FIG. 1, there are tworecessed regions 115, 117 located on either side of the channel region135. In such cases, it is desirable that the widest lateral opening 120would correspond to those portions of recessed regions 115, 117 that arein closest proximity to each other. In some preferred embodiments, thetwo recessed regions 115, 117 have shapes that are mirror images of eachother because such structures are easier to manufacture and have morepredictable compressive effects on the channel region 135.

As shown in FIG. 1, a cross section of the recessed region 115 can havea substantially trapezoidal shape whose longest parallel side 150corresponds to the widest lateral opening 120. In this example, thetrapezoidal shape of one recessed region 115 is a mirror image of theother recessed region 117.

FIGS. 2A and 2B illustrates cross-sectional views of alternative shapesof the recessed region 115 or recessed regions 115, 117 that could beincorporated into embodiments of the device 100. For clarity, severalcomponents, analogous to that shown in FIG. 1, are not labeled. FIG. 2Ashows a recessed region 115 that defines a substantially trapezoidalshape in the cross-sectional view. Although the widest lateral opening120 is not coincident with the longest parallel side 150 at thesubstrate surface 122, the widest lateral opening 120 is still nearenough the surface 122 to be controlled by the gate 140. For example,the widest lateral opening 120 is preferably located at a depth 205 fromthe surface 122 that is less than or equal to the depth 145 in thesubstrate 110 to which the gate 140 can control current flow in thechannel region 135.

In other embodiments, as shown in FIG. 2B, a cross section of therecessed region 115, or regions 115, 117 can define a substantiallytriangular shape. In this case, a side 210 of the triangularly-shapedrecess region 115 that is nearest the surface 122 corresponds to thewidest lateral opening 120.

As shown in FIG. 1, some preferred embodiments of the gate structure 105include a gate insulation layer 155 and one or more gate spacers 160,162, 164, 166. For the example device 100 in FIG. 1, the gate structure105 comprises a silicon oxide gate insulating layer 155, a first siliconoxide gate spacer 160, a silicon nitride gate spacer 162, a secondsilicon oxide gate spacer 164 and a second silicon nitride gate spacer166. The gate spacers 160, 162, 164, 166 advantageously localize thedopants of the source and drain regions and source and drain extensions.In some cases, the widest lateral opening 120 of the recessed regions115, 117 undercuts one or more of the spacers 160, 162, 164, 166.Undercutting one or more of the spacers 160, 162, 164, 166 is desirablebecause it positions the recessed region 115 closer to the channelregion 135, thereby allowing greater stress to be applied to the channelregion 135.

In other cases, the widest lateral opening 120 also undercuts the gateelectrode 140 of the gate structure 105. Undercutting the gate electrode140, however, may not be desirable in cases where the material in therecessed region 115 can interact with the gate electrode 140 or the gateinsulator 155. For instance, such interactions can detrimentally affectdevice performance by increasing gate-to-drain leakage.

In some preferred embodiments, the recessed regions 115, 117 compriseone of a source 170 or a drain structure 172 for the semiconductordevice 100. For the example device 100 illustrated in FIG. 1, the sourceand drain structures 170, 172 are located in a doped region 175 of thesubstrate 110.

It is desirable for the recessed region 115 (or regions 115, 117) tocomprise a material 180 that causes compressive or tensile stress on thechannel region 135 located under the gate structure 105. E.g., therecessed region 115 can be filled with a compressive stress-producingmaterial 180 such as silicon-germanium. Preferred ratios of Si:Ge rangefrom about 10% to 30%. The recessed region 115 can be filled with atensile-producing material such as silicon-carbon. Preferred ratios ofSi:C range from about 1% to 4%.

As shown in FIG. 1, the recessed region 115 can be located in a layer182 of the semiconductor substrate 110. For instance, the recessedregion 115 can be located in a silicon layer 182 that is epitaxiallygrown on a silicon-germanium substrate 110, thereby making the siliconlayer 182 a tensile-strained layer. In other cases, however, therecessed region 115 can be located in a silicon substrate 110. Therecessed region 115 can also be located in an indium phosphide (InP) orgallium arsenide (GaAs) substrate 110, or other substrates or layers,preferably having known crystallographic orientation dependent etches.

In some preferred embodiments, the recessed region 115 is separated froman isolation region 185 (e.g., shallow trench isolation structure). Thatis, a portion 187 of substrate 110 remains between the isolation region185 and the recessed region 115. Keeping the recessed region 115separate from the isolation region 185 beneficially reduces diodeleakage and pipe formation after silicidation of the source and drainstructures 170, 172 because there is no direct contact between thematerial of the isolation region 185 (e.g., SiO2) and material of therecessed region 115 (e.g., Si:Ge).

In some cases as shown in FIG. 1, a lateral side 190 of the recessedregion 115 nearest to the isolation region 185 is angled away from theisolation region 185. Consequently, a shortest parallel side 192 therecessed region 115 is farther away from the isolation region 185 thanthe longest parallel side 150. This beneficially eliminates defects thatmight form between the epitaxial layer and the isolation region 185.Such defects can detrimentally facilitate pipe defect formation duringnickel silicidation of the source and drain 170, 172.

FIGS. 3 to 6 illustrate cross section views of selected steps in anexample implementation of a method of fabricating a semiconductor device100 of the invention. The same reference numbers are used to depictanalogous structures to that depicted in FIG. 1.

FIG. 3 shows the partially completed semiconductor device 100 afterforming a gate structure 105 over a semiconductor substrate 110.Conventional materials and methods can be used to form the gatestructure 105. For instance, photolithographic techniques can be used topattern silicon oxide and polysilicon layers to form a gate insulator155 and gate electrode 140, respectively. Gate spacers 160, 162, 164,166 can be formed by e.g., thermally growing or chemically vapordepositing layers of silicon oxide or silicon nitride, followed by ananisotropic etch, such as a reactive ion etch (RIE) to remove portionsof these layers that are not proximate to the vertical walls 310 of thegate electrode 140 (e.g., portions outside of the perimeter 130 of thegate structure 105 shown in FIG. 1).

The partially completed semiconductor device 100 in FIG. 3 is also shownafter forming a doped region 175 and isolation structures 185 in thesubstrate 110. The doped region can be formed by implanting p-type(e.g., boron) or n-type dopants (e.g., phosphorus or arsenic) into thesubstrate 110 using an ion-beam implantation tool. The isolationstructures 185 can be formed using conventional photolithographicpatterning and etching methods to form openings in the substrate 110,followed by filling the openings with an insulating material, such assilicon oxide using physical vapor deposition (PVD) or chemical vapordeposition (CVD) processes.

FIG. 4 presents the partially completed semiconductor device 100 afterforming a recessed region 115 (or regions 115, 117) in the semiconductorsubstrate 110. As noted above in the context of FIG. 1, the recessedregion 115 has a widest lateral opening 120 that is near a top surface122 of the semiconductor substrate 110 and the widest lateral opening120 undercuts a gate structure 105 of the device 100.

Forming the recessed region 115 comprises wet etching to selectivelyremove substrate 110 up to a predefined orientation plane 410. Asillustrated in FIG. 4 the predefined orientation plane 410 can compriseone or more surfaces of the recessed region 115. Consider when thepredefined orientation plane 410 comprises an [111] orientation plane ina silicon substrate 110. In some preferred embodiments, wet etching thesilicon substrate 110 selectively up to the [111] orientation plane 410comprises removing a removal plane 412 of the substrate 110. Removing an[100] orientation removal plane 412 can comprise exposing the siliconsubstrate 110 to an aqueous solution comprising a hydroxide salt such aspotassium hydroxide. Removing an [110] orientation removal plane 412 cancomprise exposing the silicon substrate 110 to an aqueous solutioncomprising an hydroxide salt (e.g., potassium hydroxide) and alcohol(e.g., propanol, such as n-propanol or catechol ethanol). Other possibleorientation dependent etching solutions can comprise choline,tetramethyl ammonium hydroxide, tetraethylammonium hydroxide,ethylenadiamine, hydrazine or combinations thereof. In some preferredembodiments, the aqueous solution comprises about 2.4% tetramethylammonium hydroxide.

It is desirable for the components of the wet etch to be selected so asto not substantially remove material from other device components suchas the gate structure 105 or isolation structures 185. Preferably, forexample, the wet etch removes the desired removal planes 412 of siliconat least about 100 times faster than the silicon oxide or siliconnitride components of the gate structure 105 or isolation structures185.

In some cases, as illustrated in FIG. 4, to help prevent the etching andundesired removal of device components (e.g., the gate 105 and isolation185 structure), the substrate 110 can be coated with a hardmask 420comprising e.g. silicon oxide using conventional techniques such as CVD.To gain access to regions of the substrate 110 selected for wet etching,openings 430 in the hardmask 420 can be made using conventional methods,such as a plasma etch, an aqueous hydrofluoric acid etch, or both.

The selective removal of the substrate 110 up to the predefinedorientation plane 410 is possible because the wet etch removes portionsof the substrate 110 from one orientation plane, e.g., the removal plane412, faster than the predefined orientation plane 410. In some preferredembodiments, the wet etch removes the semiconductor substrate 110 at arate that is at least 10 times faster from the removal plane 412 thanfrom the predefined orientation plane 410.

For instance, embodiments of the wet etch comprising KOH:n-propanol:H2O25:20:80 (weight percent ratios) at 80° C. can remove silicon from anorientation removal plane 412 at about 1 micron per minute, which isabout 100 times faster than the removal rate of silicon from an [111]predefined orientation plane 410 under the same conditions. Anotherembodiment of the wet etch comprises ethylenediamine:pyrocatechol:H2O 26ml:12 ml:45 gm at about 100° C., which have a similar silicon etch rateof about 1 micron per minute in the [100] plane and similar selectivitywith respect to the predefined [111] orientation plane 410.

Embodiments of the wet etch comprising KOH:H2O 50:50 (volume percentratios) at about 80° C. can remove silicon from an [110] orientationremoval plane 412 at about 1 micron per minute. This rate is about 600times faster than the removal rate of silicon from a predefined [111]orientation plane 410 under the same conditions.

In some instances, the wet etch that is selective towards one of theremoval planes 412 is continued until a predefined orientation plane 410is reached. This can produce a triangular-shaped recessed region 115such as depicted in FIG. 2B. In other instances, the wet etch can beperformed for a shorter period, resulting in the production of atrapezoidal-shaped recessed region, such as depicted in FIG. 1.

Some embodiments of forming the recessed region 115 further include dryetching the semiconductor substrate 110. The dry etch can be anisotropic or aniostropic plasma etch and can be performed before orafter the wet etch. In some embodiments, however, it is preferable forthe wet etch to be performed last, because the dry etch can leavecontaminants, e.g., organic or inorganic polymers associated withinductively coupled plasma dry etch processes, in the recessed region115.

While not limiting the scope of the invention by theory, it is believedthat the contaminants are deposited on surfaces 415 of the recessedregion 115 that are created by dry etch plasma processes. The presenceof contaminant on roughened surfaces 415, in turn, necessitates theexpense of time and resources on aggressive cleaning processes (e.g.,one or more of oxygen and fluorine cleaning plasmas, hydrogen bakes, wetcleans with hydrogen peroxide and ammonium hydroxide, and aqueoushydrofluoric acid cleans) before the recessed region 115 can be filled.

In contrast, the wet etch of the present invention renders surfaces 415of the recessed region 115 substantially smoother than obtained from dryetching. E.g., in some embodiments atomically flat surfaces 415 areachieved that are significantly smoother (e.g., at least about 10percent less) than the typical average root-mean-square variation (RMS)obtainable for the surfaces 415 when using a dry etch (e.g., about 1.5nm RMS). Having a smoother surface 415 has two benefits. First, thereare reduced amounts of contaminants deposited in the recessed region115. This reduces the amount of time and resources spent to removecontaminants. Second, it is easier to fill the recessed region 115 byepitaxially growing a material on smooth surface 415.

The mild use, or absence, of a dry etch to form the recessed region 115helps to keep the recessed region 115 separate from the isolation region185 because the wet etch used to form the recessed region does not etchthe isolation region 185. The mild use or absence of dry etching alsohelps to keep the isolation region 185 in substantially the same planeas the substrate surface 125, thereby facilitating the formation ofelectrical contacts to the source and drain structures 170, 172.

In some embodiments, the dry etch comprises removing an about 1nanometer to 20 nanometer depth 440 of the substrate 110 using ananisotropic etch such as reactive ion etching comprising, e.g., HBr orsimilar etching chemistries. Preferably, the depth 440 removed by thedry etch is not greater than the depth 145 of substrate 110 controllableby the gate electrode 140. The dry etch is then followed by the wet etchto yield a substantially trapezoidal-shaped recessed region 115, havingsmooth surfaces 415 such as depicted in FIG. 2A.

Alternatively, the wet etch can be performed first, and then followed byan isotropic dry etch. The isotropic dry etch can also comprise HBr orsimilar etching chemistries, but used at a lower bias power setting. Theisotropic dry etch tends to produce trapezoidal-shaped or substantiallytrapezoidal-shaped recessed region 115, such as depicted in FIGS. 1 and2A, respectively. One skilled in the art would be familiar with otheranisotropic or isotropic dry etch procedures that could be used toremove silicon or other substrate 110 in a similar fashion.

FIG. 5 shows the partially completed semiconductor device 100 whilefilling the recessed region 115 (or regions 115, 117) with a material180 that causes compressive (e.g., silicon germanium) or tensile stress(e.g., silicon carbon) on the channel region 135 located under the gatestructure 105. The device 100 is shown after also removing the hardmask420, e.g., using an aqueous hydrofluoric acid etch. Preferably, thematerial 180 is epitaxially grown in the recessed region 115 using CVD.In some preferred embodiments, a material 180 comprising SiGe isselectively epitaxially grown in the recessed region 115 (e.g., grown onthe silicon surfaces 415 of recessed region 115 to the exclusion ofsilicon oxide or silicon nitride covered surfaces) using a CVD processcomprising SiH4:GeH4:HCL.

FIG. 6 shows the semiconductor device 100 after completely filling therecessed regions 115, 117 to form source and drain structures 170, 172,and after forming metal silicide electrodes 610 over the gate electrode140, and the source and drain structures 170, 172. The metal silicideelectrodes 610 can be formed by conventional methods such as, physicalvapor depositing a transitional metal (e.g., nickel) over the gateelectrode 140, and the source and drain structures 170, 172 and thenreacting the transitional metal with the polysilicon of the gateelectrode 140, and a

Another embodiment is a method for manufacturing a semiconductor deviceconfigured as an integrated circuit. FIGS. 7 and 8 illustratecross-sectional views of an example method of manufacturing anintegrated circuit 700 according to the principles of the presentinvention. The same reference numbers are used to depict analogousstructures to that depicted in FIGS. 1-6.

FIG. 7 shows the integrated circuit 700 after forming a transistordevice 710. In some preferred embodiments, as shown in FIG. 7, thedevice 710 comprises a metal oxide semiconductor (MOS) device. Asfurther illustrated in FIG. 7, the transistor device 710 can comprise acomplementary MOS (CMOS) device that includes a pMOS transistor 715 andan nMOS transistor 720. However, the device 710 can also comprisejunction field effect transistors, bipolar transistors, or otherconventional device components, and combinations thereof.

Any of the embodiments of the semiconductor device 100 and its method ofmanufacture, as discussed above in the context of FIGS. 1-6, can be usedto fabricate the device 710 or the transistors 715, 720. For instance,forming one or more recessed regions 115, 117 in a semiconductorsubstrate 110 can comprise wet etching, such discussed above in thecontext of FIG. 4, to selectively remove the semiconductor substrate 110up to a predefined orientation plane 410. The recessed region 115 (orregions 115, 117) can be formed so as to have a widest lateral opening120 that is near a top surface 122 of the substrate 110 and to undercuta gate structure 105 formed over the substrate 110.

In some cases, e.g., when the device 710 comprises a pMOS transistor715, the recessed region 115 (or regions 115, 117) is preferably filledwith a compression producing material 725 (e.g., silicon germanium). Acompressive stress 730 is produced on a channel region 135 under thegate structure 105. Preferably, the compressive stress 730 is in adirection substantially parallel to an intended current flow 740 throughthe channel region 135 of the pMOS transistor 715. In other cases, suchas when the device 710 comprises an nMOS transistor 720, the recessedregion 745 (or regions 745, 747) is preferably filled with a tensionproducing material 750 (e.g., silicon carbon). A tensile stress 755 isproduced on the channel region 135 under the gate structure 760,preferably in a direction substantially parallel to the intended currentflow 740 through the channel region 135 of the nMOS transistor 720.

FIG. 8 illustrates the integrated circuit 700 after forminginterconnections 800, 810, 820, 830 that contact the device 710 andafter forming insulating layers 840, 850, 860 over the device 710.

In some preferred embodiments, the semiconductor device configured as anintegrated circuit 700 comprises a pMOS transistor 715 and nMOStransistor 720. The pMOS transistor 715 has a first gate structure 105configured as the gate structure and first recessed regions 115, 117configured as the recessed region as described above in the context ofFIG. 1. The first recessed regions 115, 117 are filled with acompression producing material 725. Similarly, the nMOS transistor 720has a second gate structure 760 configured as the gate structure andsecond recessed regions 745, 747 configured as the recessed region asdescribed above in the context of FIG. 1. The second recessed regions745, 747 are filled with a tension producing material 750. Theintegrated circuit 700 further includes the interconnections 800, 810,820, 830 and insulating layers 840, 850, 860.

Those skilled in the art to which the invention relates will appreciatethat other and further additions, deletions, substitutions andmodifications may be made to the described example embodiments, withoutdeparting from the invention.

1. A method for manufacturing a semiconductor device, comprising:forming a gate structure over a semiconductor substrate, the gatestructure comprising a gate electrode; forming isolation regions withinsaid semiconductor substrate; and forming a recessed-region having abottom surface having a first crystal orientation plane and a sidesurface having a second crystal orientation plane in said semiconductorsubstrate, comprising wet-etching to selectively remove saidsemiconductor substrate and dry-etching the semiconductor substrate,wherein the wet etching removes portions of the semiconductor substratefrom the first crystal orientation plane positioned at the bottomsurface of the recessed-region at a faster rate than from the secondcrystal orientation plane, and wherein said recessed-region has a widestlateral opening that is near a top surface of said semiconductorsubstrate and is spaced from an adjacent isolation region at the widestlateral opening.
 2. The method of claim 1, wherein said widest lateralopening is below and within about 25 nanometers of said top surface. 3.The method of claim 1, wherein said second crystal orientation plane isan [111] orientation plane in a silicon substrate.
 4. The method ofclaim 1, wherein the first crystal orientation plane is a [100] or [110]plane in a silicon substrate.
 5. The method of claim 4, wherein saidwet-etch removes said semiconductor substrate from said first crystalorientation plane at a rate that is at least 100 times faster than aremoval rate from said second crystal orientation plane.
 6. The methodof claim 4, wherein said wet-etch removes silicon oxide or siliconnitride at least 100 times slower than a rate of removal of saidsemiconductor substrate from said first crystal orientation plane. 7.The method of claim 1, wherein said dry-etch comprises an anisotropicetch.
 8. The method of claim 1, wherein said wet-etch comprises anetching solution of KOH:n-propanol:H₂O.
 9. The method of claim 8,wherein a weight percent ratio for the KOH:n-propanol:H₂O isapproximately 25:20:80.
 10. The method of claim 1, wherein said wet-etchcomprises an etching solution of ethylenediamine:pyrocatechol:H₂O. 11.The method of claim 10, wherein a ratio ofethylenediamine:pyrocatechol:H₂O is approximately 26 ml:12 ml:45 gm. 12.A method of manufacturing a semiconductor device configured as anintegrated circuit comprising: forming a transistor device comprising:forming a gate structure over a semiconductor substrate, the gatestructure comprising a gate electrode; forming isolation regions withinsaid semiconductor substrate; and forming a recessed-region having abottom surface having a first crystal orientation plane and a sidesurface having a second crystal orientation plane in said semiconductorsubstrate, comprising wet-etching to selectively remove saidsemiconductor substrate and dry-etching the semiconductor substrate,wherein the wet etching removes portions of the semiconductor substratefrom the first crystal orientation plane positioned at the bottomsurface of the recessed-region at a faster rate than from the secondcrystal orientation plane, and wherein said recessed-region has a widestlateral opening that is near a top surface of said semiconductorsubstrate and is spaced from an adjacent isolation region at the widestlateral opening; forming insulating layers over said transistor device,and forming interconnections that contact said transistor device. 13.The method of claim 12, wherein said transistor device comprises a pMOStransistor and said recessed-region is filled with acompression-producing-material.
 14. The method of claim 12, wherein saidtransistor device comprises an nMOS transistor and said recessed-regionis filled with a tension-producing-material.